2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SC3518-Z features low v ce(sat) . fast switching speed. high dc current gain. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7v collector current i c 5a collector current (pulse) *1 i cp 7a total power dissipation *2 p t 2w junction temperature t j 150 storage temperature t stg -55to+150 *1 pw 10 ms, duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm 2 x0.7mm electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 50v, i e =0 10 a emitter cutoff current i ebo v eb =7v,i c =0 10 a v ce =1v,i c = 2a 100 400 v ce =1v,i c =5a 50 collector-emitter saturation voltage * v ce(sat) i c =2a,i b = 0.2a 0.3 v base-emitter saturation voltage * v be(sat) i c =2a,i b = 0.2a 1.2 v gain bandwidth product f t v ce = 10v , i e = 500ma 120 mhz turn-on time t on v cc = 10v, r l =5 0.07 1 s storage time t stg i c =2a, 0.8 2.5 s turn-off time t off i b1 =-i b2 = 0.2a 0.12 1 s *. pw 350s,duty cycle 2% dc current gain * h fe v h fe classification marking m l k hfe 100 200 150 300 200 400 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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